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4N35 IC - Optocoupler Phototransistor IC

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The 4N35 optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. The couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage.

This isolation performance is accomplished through  double molding isolation manufacturing process. Comliance to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1.

These isolation processes and the  ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.

Specification:-

Symbol

Parameter

Value

Unit

VR

Reverse voltage

6

V

IF

Forward current

60

mA

IFSM

Surge current

2.5

A

Pdiss

Power dissipation

100

mW

VCEO

Collector-emitter breakdown voltage

70

V

VEBO

Emitter-base breakdown voltage

7

V

IC

Collector current

100

mA

Weight 2.1 kg
Dimensions 122 × 145 × 321 cm

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